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Seria KIOXIA BG4
Dysk SSD klienta
NVMe™ SSD M.2
Seria BG4 to gama kompaktowych dysków SSD NVMe™ w pojedynczym opakowaniu o pojemności do 1024 GB z interfejsem PCIe® Gen3 z x4 ścieżkami i 96-warstwową pamięcią TLC BiCS FLASH™ firmy KIOXIA. Dzięki większej przepustowości i ulepszonej technologii zarządzania pamięcią flash oraz buforowi pamięci hosta (HMB) dyski SSD BG4 zapewniają najlepszą w swojej klasie wydajność odczytu w jednopakietowych dyskach SSD, do 2300 MB/s (odczyt sekwencyjny) i do 390K IOPS (odczyt losowy), przy poborze mocy czynnej do 3,7 W (typowo).
Seria BG4 jest dostępna w czterech pojemnościach: 128GB, 256GB, 512GB i 1024 GB w wersjach obudów jednopakietowej M.2 1620 do montażu powierzchniowego lub w wyjmowanym module M.2 2230, dzięki czemu nadaje się do cienkich i lekkich konstrukcji przeznaczonych do ultracienkich komputerów, a także urządzeń zintegrowanych oraz uruchamiania serwerów w centrach danych.
Seria BG4 jest dostępna z opcjonalnym modelem SED (Self-Encrypting Drive) obsługującym TCG Opal w wersji 2.01.
Dokumenty
Najważniejsze cechy
96-warstwowa pamięć BiCS FLASH™ KIOXIA
PCIe® Gen3 x4, NVMe™
Pojemność do 1024 GB
Pojedynczy opakowaniu M.2 1620 i jednostronna obudowa M.2 2230
TCG Opal 2.01 opcjonalnie dla SED
Kluczowe zastosowania
- Komputery ultramobilne
- Komputery przenośne typu 2 w 1
- Urządzenia zintegrowane / Internet rzeczy
- Dyski rozruchowe do serwerów i macierzy dyskowych
Specyfikacje

* Table can be scrolled horizontally.
Base Model Number | KBG40ZPZ1T02 | KBG40ZPZ512G | KBG40ZPZ256G | KBG40ZPZ128G |
---|---|---|---|---|
Capacity | 1,024 GB | 512 GB | 256 GB | 128 GB |
Basic Specifications | ||||
Form Factor | M.2 1620-S3 Single package | M.2 1620-S2 Single package | ||
Connector Type | - | |||
lnterface | PCIe® Gen3 x4, NVMe™ 1.3b | |||
Maximum Interface Speed | 32 GT/s (Gen3 x4) | |||
Flash Memory Type | BiCS FLASH™ TLC | |||
Sequential Read | 2,300 MB/s | 2,200 MB/s | 2,000 MB/s | |
Sequential Write | 1,800 MB/s | 1,400 MB/s | 800 MB/s | |
Random Read | 390 K IOPS | 330 K IOPS | 200 K IOPS | |
Random Write | 200 K IOPS | 190 K IOPS | 150 K IOPS | |
Reliability | ||||
MTTF | 1,500,000 hours | |||
Power Requirements | ||||
Supply Voltage | 3.3 V ± 5 %, 1.8 V ±5 %,1.2 V ±5 % | |||
Power Consumption (Active) | 3.4 W typ. | 3.1 W typ. | 3.2 W typ. | 3 W typ. |
Power Consumption (L1.2 mode) | 5 mW typ. | |||
Dimensions | ||||
Height | 1.5 mm Max. | 1.3 mm Max. | ||
Width | 16.0 mm Max. | |||
length | 20.0 mm Max. | |||
Weight | 1.0 g Max. | 0.85 g Max. | ||
Environmental | ||||
Temperature (Operating) | 0 ~ 85 °C(TSMART) | |||
Temperature(Non-operating) | -40 ~ 85 °C | |||
Vibration (Operating/Non-operating) | - | |||
Shock (Operating/Non-operating) | - | |||
More features | ・Host Memory Buffer feature is supported. ・SLC cache is supported. ・Sanitize command is supported. |

* Table can be scrolled horizontally.
Base Model Number | KBG40ZNS1T02 | KBG40ZNS512G | KBG40ZNS256G | KBG40ZNS128G |
---|---|---|---|---|
Capacity | 1,024 GB | 512 GB | 256 GB | 128 GB |
Basic Specifications | ||||
Form Factor | M.2 2230-S3 Single-sided | M.2 2230-S2 Single-sided | ||
Connector Type | M.2 M | |||
lnterface | PCIe® Gen3 x4, NVMe™ 1.3b | |||
lnterface Speed | 32 GT/s (Gen3 x4) | |||
Flash Memory Type | BiCS FLASH™ TLC | |||
Sequential Read | 2,300 MB/s | 2,200 MB/s | 2,000 MB/s | |
Sequential Write | 1,800 MB/s | 1,400 MB/s | 800 MB/s | |
Random Read | 390 K IOPS | 330 K IOPS | 200 K IOPS | |
Random Write | 200 K IOPS | 190 K IOPS | 150 K IOPS | |
Reliability | ||||
MTTF | 1,500,000 hours | |||
Power Requirements | ||||
Supply Voltage | 3.3 V ± 5 % | |||
Power Consumption (Active) | 3.7 W typ. | 3.5 W typ. | 3.6 W typ. | 3.4 W typ. |
Power Consumption (L1.2 mode) | 5 mW typ. | |||
Dimensions | ||||
Height | 2.38 mm Max. | 2.23 mm Max. | ||
Width | 22.0 mm Max. | |||
length | 30.0 mm Max. | |||
Weight | 2.6 g Max. | 2.5 g Max. | ||
Environmental | ||||
Temperature (Operating) | 0 ~ 85 °C(TSMART) | |||
Temperature(Non-operating) | -40 ~ 85 °C | |||
Vibration (Operating/Non-operating) | 196 m/s2 { 20 G } ( Peak, 10 ~ 2,000 Hz ) | |||
Shock (Operating/Non-operating) | 14.7 km/s2 { 1,500 G } ( 0.5 ms ) | |||
More features | ・Host Memory Buffer feature is supported. ・SLC cache is supported. ・Sanitize command is supported. |
- Product image may represent a design model.
- Availability of the SED model line-up may vary by region.
- Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
- 1 MB (megabyte) = 1,000,000 bytes.
- IOPS: Input Output Per Second (or the number of I/O operations per second).
- Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host device, read and write conditions, and file size.
- Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
- MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
- TSMART : Composite Temperature in SMART/Health Information
- PCIe is a registered trademark of PCI-SIG.
- NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
- Other company names, product names, and service names may be trademarks of their respective companies.
- All information provided here is subject to change without prior notice.
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