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BG6-серия (М.2) от KIOXIA
Клиентский SSD-накопитель NVMe™
BG6-серия от KIOXIA - это линейка NVMe™ SSD накопителей в компактном форм-факторе с емкостью до 2048 ГБ, в которых используется интерфейс PCIe® 4.0, соответствующий спецификации NVMe™ 1.4с, и TLC флэш-память BiCS FLASH™ 6-го поколения от KIOXIA*. Благодаря более высокой пропускной способности, улучшенному управлению флэш-памятью и технологии буфера памяти хоста (HMB) твердотельные накопители BG6-серии обеспечивают очень высокую в своем классе производительность чтения для твердотельных накопителей в компактном форм-факторе: до 6000 МБ/с (последовательное чтение) и до 900 000 IOPS (операций ввода-вывода в секунду) (произвольное чтение).
Твердотельные накопители KIOXIA BG6-серии доступны с емкостью 256 ГБ, 512 ГБ, 1024 ГБ и 2048 ГБ в форм-факторах модуля M.2 тип 2230 и тип 2280, что делает их подходящими для компактных и легких систем, таких как ультратонкие ПК, встроенных устройств, и задач, связанных с загрузкой серверов в дата-центрах. BG6-серия предлагает модель с опцией самошифрования (SED), поддерживающей TCG Opal версии 2.01.
- TLC флэш-память BiCS FLASH™ 5-го поколения от KIOXIA для твердотельных накопителей BG6 емкостью 256 ГБ и 512 ГБ
Документы
Ключевые особенности
- TLC флэш-память BiCS FLASH™ 6-го поколения от KIOXIA (TLC флэш-память BiCS FLASH™ 5-го поколения от KIOXIA для 256 ГБ и 512 ГБ)
- PCIe® 4.0, соответствие спецификации NVMe™ 1.4с
- Емкость до 2048 ГБ
- Односторонние форм-факторы M.2 тип 2230 и тип 2280
- Опция самошифрования (SED) TCG Opal 2.01
Ключевые области применения
- Ультрамобильные ПК
- Ноутбуки 2 в 1
- Интернет Вещей/встраиваемые устройства
- Загрузочные диски серверов и массивов хранения
Характеристики

* Table can be scrolled horizontally.
Base Model Number | KBG60ZNS2T04 | KBG60ZNS1T02 | KBG60ZNS512G | KBG60ZNS256G |
---|---|---|---|---|
SED Model Number | KBG6AZNS2T04 | KBG6AZNS1T02 | KBG6AZNS512G | KBG6AZNS256G |
Capacity | 2,048 GB | 1,024 GB | 512 GB | 256 GB |
Basic Specifications | ||||
Form Factor | M.2 2230-S3 Single-sided | M.2 2230-S2 Single-sided | ||
lnterface | PCIe® 4.0, NVMe™ 1.4c | |||
Maximum Interface Speed | 64 GT/s (PCIe® Gen4 x4) | |||
Flash Memory Type | BiCS FLASH™ TLC | |||
Performance (Up to) | ||||
Sequential Read | 6,000 MB/s | 4,800 MB/s | 4,400 MB/s | |
Sequential Write | 5,300 MB/s | 5,000 MB/s | 4,000 MB/s | 3,000 MB/s |
Random Read | 900K IOPS | 650K IOPS | 350K IOPS | |
Random Write | 900K IOPS | 850K IOPS | 700K IOPS | |
Power Requirements | ||||
Supply Voltage | 3.3 V ± 5 % | |||
Power Consumption (Active) | 4.4 W typ. | 4.3 W typ. | 4.7 W typ. | 4.3 W typ. |
Power Consumption (L1.2 mode) | 3.0 mW typ. | |||
Reliability | ||||
MTTF | 1,500,000 hours | |||
TBW | 1,200 | 600 | 300 | 150 |
Dimensions | ||||
Thickness | 2.38 mm Max | 2.23 mm Max | ||
Width | 22 mm ± 0.15 mm | |||
Length | 30 mm ± 0.15 mm | |||
Weight | 3.0 g Max | 2.9 g Max | 2.8 g Max | 2.7 g Max |
Environmental | ||||
Temperature (Operating) | 0 ℃ to 95 ℃ (Controller Temperature) | |||
Temperature (Operating) | 0 ℃ to 85 ℃ (Other Components Temperature) | |||
Temperature (Non-operating) | -40 ℃ to 85 ℃ | |||
Humidity (Operating) | 0 % to 90 % R.H. | |||
Vibration (Operating) | 196 m/s2 { 20 Grms } ( 20 to 2,000 Hz ) | |||
Shock (Operating) | 14.7 km/s2 { 1,500 G } ( 0.5 ms ) |

* Table can be scrolled horizontally.
Base Model Number | KBG60ZNV2T04 | KBG60ZNV1T02 | KBG60ZNV512G | KBG60ZNV256G |
---|---|---|---|---|
SED Model Number | KBG6AZNV2T04 | KBG6AZNV1T02 | KBG6AZNV512G | KBG6AZNV256G |
Capacity | 2,048 GB | 1,024 GB | 512 GB | 256 GB |
Basic Specifications | ||||
Form Factor | M.2 2280-S3 Single-sided | M.2 2280-S2 Single-sided | ||
lnterface | PCIe® 4.0, NVMe™ 1.4c | |||
Maximum Interface Speed | 64 GT/s (PCIe® Gen4 x4) | |||
Flash Memory Type | BiCS FLASH™ TLC | |||
Performance (Up to) | ||||
Sequential Read | 6,000 MB/s | 4,800 MB/s | 4,400 MB/s | |
Sequential Write | 5,300 MB/s | 5,000 MB/s | 4,000 MB/s | 3,000 MB/s |
Random Read | 900K IOPS | 650K IOPS | 350K IOPS | |
Random Write | 900K IOPS | 850K IOPS | 700K IOPS | |
Power Requirements | ||||
Supply Voltage | 3.3 V ± 5 % | |||
Power Consumption (Active) | 4.4 W typ. | 4.3 W typ. | 4.7 W typ. | 4.3 W typ. |
Power Consumption (L1.2 mode) | 3.0 mW typ. | |||
Reliability | ||||
MTTF | 1,500,000 hours | |||
TBW | 1,200 | 600 | 300 | 150 |
Dimensions | ||||
Thickness | 2.38 mm Max | 2.23 mm Max | ||
Width | 22 mm ± 0.15 mm | |||
Length | 80 mm ± 0.15 mm | |||
Weight | 6.0 g Max | 5.9 g Max | 5.8 g Max | 5.7 g Max |
Environmental | ||||
Temperature (Operating) | 0 ℃ to 95 ℃ (Controller Temperature) | |||
Temperature (Operating) | 0 ℃ to 85 ℃ (Other Components Temperature) | |||
Temperature (Non-operating) | -40 ℃ to 85 ℃ | |||
Humidity (Operating) | 0 % to 90 % R.H. | |||
Vibration (Operating) | 196 m/s2 { 20 Grms } ( 20 to 2,000 Hz ) | |||
Shock (Operating) | 14.7 km/s2 { 1,500 G } ( 0.5 ms ) |
- Product image may represent a design model.
- Availability of the SED model line-up may vary by region.
- Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
- IOPS: Input Output Per Second (or the number of I/O operations per second).
- TBW: Terabytes Written. The number of terabytes that may be written to the SSD for the specified lifetime.
- Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host device, read and write conditions, and file size.
- Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
- MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
- PCIe is a registered trademark of PCI-SIG.
- NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
- Other company names, product names, and service names may be trademarks of third-party companies.
- All information provided here is subject to change without prior notice.
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