Εικόνα του bg6_001

Πελάτης NVMe™ SSD

Η σειρά KIOXIA BG6 είναι μια σειρά μονάδων SSD NVMe™ συμπαγούς συντελεστή μορφής με χωρητικότητες έως και 2.048 GB που αξιοποιεί μια διεπαφή συμβατή με προδιαγραφές PCIe® 4.0, NVMe™ 1.4c και τη μνήμη flash BiCS FLASH™ TLC 6ης γενιάς της KIOXIA*. Διαθέτοντας υψηλότερο εύρος ζώνης, βελτιωμένη διαχείριση flash και τεχνολογία Host Memory Buffer (HMB), οι SSD της σειράς BG6 παρέχουν πολύ υψηλή απόδοση ανάγνωσης στην κατηγορία τους ανάμεσα στους SSD συμπαγούς συντελεστή μορφής, έως και 6.000 MB/s (διαδοχική ανάγνωση) και έως και 900.000 IOPS (τυχαία ανάγνωση).

Οι δίσκοι SSD της σειράς BG6 της KIOXIA διατίθενται σε χωρητικότητες 256 GB, 512 GB, 1.024 GB και 2.048 GB σε μορφότυπους M.2 Type 2230 και Type 2280, καθιστώντας τους κατάλληλους για λεπτούς και ελαφρούς σχεδιασμούς συστημάτων, όπως οι εξαιρετικά λεπτοί υπολογιστές. Η σειρά BG6 διατίθεται με την επιλογή μονάδας με αυτο-κρυπτογράφηση (SED) με υποστήριξη TCG Opal έκδοση 2.01.

  • Μνήμη flash KIOXIA BiCS FLASH™ 5ης γενιάς TLC για δίσκους SSD BG6 χωρητικότητας 256 GB και 512 GB

Έγγραφα

Βασικά χαρακτηριστικά

  • Μνήμη flash KIOXIA BiCS FLASH™ 6ης γενιάς TLC (μνήμη flash KIOXIA BiCS FLASH™ 5ης γενιάς TLC για 256 GB και 512 GB)
  • Συμβατότητα με τις προδιαγραφές PCIe® 4.0, NVMe™ 1.4
  • Χωρητικότητες έως και 2.048 GB
  • Μονόπλευροι συντελεστές μορφής M.2 Type 2230 και Type 2280
  • Επιλογή SED TCG Opal 2.01
     

Βασικές εφαρμογές

  • Υπολογιστές εξαιρετικά μικρού μεγέθους
  • Υπολογιστές notebook 2 σε 1

Προδιαγραφές

M.2 Συντελεστής φόρμας μονάδας τύπου 2230

* Table can be scrolled horizontally.

Base Model NumberKBG60ZNS2T04KBG60ZNS1T02KBG60ZNS512GKBG60ZNS256G
SED Model NumberKBG6AZNS2T04KBG6AZNS1T02KBG6AZNS512GKBG6AZNS256G
Capacity2,048 GB1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2230-S3 Single-sidedM.2 2230-S2 Single-sided
lnterfacePCIe® 4.0, NVMe™ 1.4c
Maximum Interface Speed64 GT/s (PCIe® Gen4 x4)
Flash Memory TypeBiCS FLASH™ TLC
Performance (Up to)
Sequential Read6,000 MB/s4,800 MB/s4,400 MB/s
Sequential Write5,300 MB/s5,000 MB/s4,000 MB/s3,000 MB/s
Random Read900K IOPS650K IOPS350K IOPS
Random Write900K IOPS850K IOPS700K IOPS
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.4 W typ.4.3 W typ.4.7 W typ.4.3 W typ.
Power Consumption (L1.2 mode)3.0 mW typ.
Reliability
MTTF1,500,000 hours
TBW1,200600300150
Dimensions
Thickness2.38 mm Max2.23 mm Max
Width22 mm ± 0.15 mm
Length30 mm ± 0.15 mm
Weight3.0 g Max2.9 g Max2.8 g Max2.7 g Max
Environmental
Temperature (Operating)0 ℃ to 95 ℃ (Controller Temperature)
Temperature (Operating)0 ℃ to 85 ℃ (Other Components Temperature)
Temperature (Non-operating)-40 ℃ to 85 ℃
Humidity (Operating)0 % to 90 % R.H.
Vibration (Operating)196 m/s2 { 20 Grms } ( 20 to 2,000 Hz )
Shock (Operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
M.2 Συντελεστής φόρμας μονάδας τύπου 2280

* Table can be scrolled horizontally.

Base Model NumberKBG60ZNV2T04KBG60ZNV1T02KBG60ZNV512GKBG60ZNV256G
SED Model NumberKBG6AZNV2T04KBG6AZNV1T02KBG6AZNV512GKBG6AZNV256G
Capacity2,048 GB1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2280-S3 Single-sidedM.2 2280-S2 Single-sided
lnterfacePCIe® 4.0, NVMe™ 1.4c
Maximum Interface Speed64 GT/s (PCIe® Gen4 x4)
Flash Memory TypeBiCS FLASH™ TLC
Performance (Up to)
Sequential Read6,000 MB/s4,800 MB/s4,400 MB/s
Sequential Write5,300 MB/s5,000 MB/s4,000 MB/s3,000 MB/s
Random Read900K IOPS650K IOPS350K IOPS
Random Write900K IOPS850K IOPS700K IOPS
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.4 W typ.4.3 W typ.4.7 W typ.4.3 W typ.
Power Consumption (L1.2 mode)3.0 mW typ.
Reliability
MTTF1,500,000 hours
TBW1,200600300150
Dimensions
Thickness2.38 mm Max2.23 mm Max
Width22 mm ± 0.15 mm
Length80 mm ± 0.15 mm
Weight6.0 g Max5.9 g Max5.8 g Max5.7 g Max
Environmental
Temperature (Operating)0 ℃ to 95 ℃ (Controller Temperature)
Temperature (Operating)0 ℃ to 85 ℃ (Other Components Temperature)
Temperature (Non-operating)-40 ℃ to 85 ℃
Humidity (Operating)0 % to 90 % R.H.
Vibration (Operating)196 m/s2 { 20 Grms } ( 20 to 2,000 Hz )
Shock (Operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
  • Product image may represent a design model.
  • Availability of the SED model line-up may vary by region.
  • Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
  • IOPS: Input Output Per Second (or the number of I/O operations per second).
  • TBW: Terabytes Written. The number of terabytes that may be written to the SSD for the specified lifetime.
  • Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host device, read and write conditions, and file size.
  • Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
  • MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
  • PCIe is a registered trademark of PCI-SIG.
  • NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
  • Other company names, product names, and service names may be trademarks of third-party companies.
  • All information provided here is subject to change without prior notice.

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