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KIOXIA commences sample shipments of 9th-generation BiCS FLASH™ 1Tb TLC devices
The new devices incorporate existing memory cell and advanced CMOS technologies to achieve high investment efficiency
- Düsseldorf, Germany, 6 August 2026
- KIOXIA Europe GmbH
KIOXIA Europe GmbH, a world leader in memory solutions, announced that KIOXIA Corporation has commenced sample shipments of 1Tb (terabit) Triple-Level Cell (TLC) memory devices incorporating its 9th-generation BiCS FLASH™ 3D flash memory technology[1]. The devices are designed to support applications such as AI-enabled PCs and smartphones with low- to mid-level storage capacities that require high performance.
KIOXIA continues to pursue a dual-axis strategy based on its innovative CMOS directly Bonded to Array (CBA) technology[2] and On-Pitch Select Gate Drain (OPS) technology[3]. Under its unique dual-axis strategy, KIOXIA is simultaneously advancing two distinct product lines: its 9th-generation solutions, which deliver high performance at relatively low cost of investing, and its 10th-generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.
The new 9th-generation BiCS FLASH™ 1Tb TLC devices, developed using a 230-layer stacking process based on 8th-generation BiCS FLASH™ technology and advanced CMOS technology, deliver a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices, matching the performance of 10th-generation devices[4].
Guided by its mission of "uplifting the world with 'memory,'" KIOXIA remains committed to driving technological innovation, strengthening global partnerships, and delivering the advanced storage solutions that power modern AI infrastructure.
Notes
[1] These samples are produced for the purpose of checking functionality; actual specifications may differ in mass production.
[2] Technology whereby each CMOS wafer and cell array wafer is manufactured separately under individually optimised conditions and then bonded together. This technology has been adopted since the 8th-generation BiCS FLASH™ products.
[3] Technology that makes it possible to shorten the bit line and reduce the word line capacitance by removing unused memory holes. This technology has been adopted since the 8th-generation BiCS FLASH™ products.
[4] 1Gb/s is calculated as 1,000,000,000 bits per second. This value was obtained in a specific test environment at KIOXIA Corporation; the results may vary in actual use depending on the usage conditions.
Product density is identified based on the density of memory chip(s) within the product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be lower due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. 1Gb = 230 bits = 1,073,741,824 bits.
Read and write speeds are the best values obtained in a specific test environment at KIOXIA Corporation; the company warrants neither read nor write speeds in individual devices. Read and write speeds may vary depending on the device used.
Company names, product names and service names may be trademarks of third-party companies.
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About KIOXIA Europe GmbH
KIOXIA Europe GmbH is the European based subsidiary of KIOXIA Corporation, a leading worldwide supplier of flash memory and solid-state drives (SSDs). From the invention of flash memory to today's breakthrough BiCS FLASH™ 3D technology, KIOXIA continues to pioneer innovative memory, SSD and software solutions that enrich people's lives and expand society's horizons. The company's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.
