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İstemci NVMe™ SSD

KIOXIA BG6 Serisi, 2.048 GB'a kadar kapasiteye sahip kompakt form faktörlü NVMe™ SSD serisidir ve PCIe® 4.0, NVMe™ 1.4c spesifikasyonuyla uyumlu arayüz ve KIOXIA BiCS FLASH™ 6. nesil TLC flash bellekten* yararlanır. Daha yüksek bant genişliği, gelişmiş flash yönetimi ve Host Memory Buffer (HMB) teknolojisiyle BG6 Serisi SSD'ler, kompakt form faktörlü SSD'ler için 6.000 MB/s'ye (sıralı okuma) ve 900K IOPS'ye (rastgele okuma) kadar çok yüksek okuma performansı sunar.

KIOXIA BG6 Serisi SSD'ler, M.2 Tip 2230 ve Tip 2280 modül form faktörlerinde 256 GB, 512 GB, 1.024 GB ve 2.048 GB kapasitelerde mevcuttur, bu da onları veri merkezlerinde ultra ince PC'ler, gömülü cihazlar ve sunucu önyüklemesi gibi ince ve hafif sistem tasarımları için uygun kılar. BG6 Serisi, TCG Opal Sürüm 2.01'i destekleyen Kendiliğinden Şifrelemeli Sürücü (SED) model seçeneği sunar.

  • 256 GB ve 512 GB kapasiteli BG6 SSD'ler için KIOXIA BiCS FLASH™ nesil 5 TLC flash bellek

Dosyalar

Temel Özellikler

  • KIOXIA BiCS FLASH™ 6. nesil TLC flash bellek (256 GB ve 512 GB için KIOXIA BiCS FLASH™ 5. nesil TLC flash bellek)
  • PCIe® 4.0, NVMe™ 1.4c spesifikasyonu uyumlu
  • 2.048 GB'a kadar kapasite
  • M.2 Tip 2230 ve Tip 2280 tek taraflı form faktörleri
  • TCG Opal 2.01 SED seçeneği
     

Temel Uygulamalar

  • Ultra mobil bilgisayarlar
  • 2'si 1 arada dizüstü bilgisayar
  • IoT/gömülü cihazlar
  • Sunucu ve depolama dizisi önyükleme sürücüleri

Spesifikasyonlar

M.2 Tip 2230 modül form faktörü

* Table can be scrolled horizontally.

Base Model NumberKBG60ZNS2T04KBG60ZNS1T02KBG60ZNS512GKBG60ZNS256G
SED Model NumberKBG6AZNS2T04KBG6AZNS1T02KBG6AZNS512GKBG6AZNS256G
Capacity2,048 GB1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2230-S3 Single-sidedM.2 2230-S2 Single-sided
lnterfacePCIe® 4.0, NVMe™ 1.4c
Maximum Interface Speed64 GT/s (PCIe® Gen4 x4)
Flash Memory TypeBiCS FLASH™ TLC
Performance (Up to)
Sequential Read6,000 MB/s4,800 MB/s4,400 MB/s
Sequential Write5,300 MB/s5,000 MB/s4,000 MB/s3,000 MB/s
Random Read900K IOPS650K IOPS350K IOPS
Random Write900K IOPS850K IOPS700K IOPS
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.4 W typ.4.3 W typ.4.7 W typ.4.3 W typ.
Power Consumption (L1.2 mode)3.0 mW typ.
Reliability
MTTF1,500,000 hours
TBW1,200600300150
Dimensions
Thickness2.38 mm Max2.23 mm Max
Width22 mm ± 0.15 mm
Length30 mm ± 0.15 mm
Weight3.0 g Max2.9 g Max2.8 g Max2.7 g Max
Environmental
Temperature (Operating)0 ℃ to 95 ℃ (Controller Temperature)
Temperature (Operating)0 ℃ to 85 ℃ (Other Components Temperature)
Temperature (Non-operating)-40 ℃ to 85 ℃
Humidity (Operating)0 % to 90 % R.H.
Vibration (Operating)196 m/s2 { 20 Grms } ( 20 to 2,000 Hz )
Shock (Operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
M.2 Tip 2280 modül form faktörü

* Table can be scrolled horizontally.

Base Model NumberKBG60ZNV2T04KBG60ZNV1T02KBG60ZNV512GKBG60ZNV256G
SED Model NumberKBG6AZNV2T04KBG6AZNV1T02KBG6AZNV512GKBG6AZNV256G
Capacity2,048 GB1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2280-S3 Single-sidedM.2 2280-S2 Single-sided
lnterfacePCIe® 4.0, NVMe™ 1.4c
Maximum Interface Speed64 GT/s (PCIe® Gen4 x4)
Flash Memory TypeBiCS FLASH™ TLC
Performance (Up to)
Sequential Read6,000 MB/s4,800 MB/s4,400 MB/s
Sequential Write5,300 MB/s5,000 MB/s4,000 MB/s3,000 MB/s
Random Read900K IOPS650K IOPS350K IOPS
Random Write900K IOPS850K IOPS700K IOPS
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.4 W typ.4.3 W typ.4.7 W typ.4.3 W typ.
Power Consumption (L1.2 mode)3.0 mW typ.
Reliability
MTTF1,500,000 hours
TBW1,200600300150
Dimensions
Thickness2.38 mm Max2.23 mm Max
Width22 mm ± 0.15 mm
Length80 mm ± 0.15 mm
Weight6.0 g Max5.9 g Max5.8 g Max5.7 g Max
Environmental
Temperature (Operating)0 ℃ to 95 ℃ (Controller Temperature)
Temperature (Operating)0 ℃ to 85 ℃ (Other Components Temperature)
Temperature (Non-operating)-40 ℃ to 85 ℃
Humidity (Operating)0 % to 90 % R.H.
Vibration (Operating)196 m/s2 { 20 Grms } ( 20 to 2,000 Hz )
Shock (Operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
  • Product image may represent a design model.
  • Availability of the SED model line-up may vary by region.
  • Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
  • IOPS: Input Output Per Second (or the number of I/O operations per second).
  • TBW: Terabytes Written. The number of terabytes that may be written to the SSD for the specified lifetime.
  • Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host device, read and write conditions, and file size.
  • Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
  • MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
  • PCIe is a registered trademark of PCI-SIG.
  • NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
  • Other company names, product names, and service names may be trademarks of third-party companies.
  • All information provided here is subject to change without prior notice.

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