Image of xg6_001

Client NVMe™ SSD

KIOXIA XG6-Serie setzt auf den neuesten 96-Layer-3-D-TLC-Flashspeicher (3 Bit pro Zelle) von KIOXIA. Mit BiCS FLASH™-Speicher der vierten Generation und SLC-Cache-Features erreichen XG6-SSDs sequenzielle Lese- und Schreibgeschwindigkeiten von bis zu 3.180MB/s bzw. Sie verbraucht im aktiven Modus 4,7W oder weniger und im Stand-by-Modus nicht einmal 3mW.

Die neue XG6-Serie ist für stromsparende Mobile-PCs, leistungsorientierte Gaming-PCs sowie für Serverboot, Caching und Logging in Rechenzentrenumgebungen optimiert.
Die XG6-Serie ist im kompakten M.2-2280-Formfaktor (single-sided) und in drei Kapazitäten (256/512/1.024GB) erhältlich. Für jedes Modell ist optional eine Version mit „Self-Encrypting Drive“ (SED) inklusive Unterstützung für TCG Opal Version 2.01 verfügbar.



  • 96-Layer BiCS FLASH™ von KIOXIA
  • PCIe® Gen3 x4, NVMe™
  • Speicherkapazitäten bis zu 1.024 GB
  • M.2 2280 Einseitig
  • TCG OPAL 2.01 optional für SED


  • Leistungsstarke, dünne Notebook-PCs
  • High-Performance-Desktop-PCs
  • Gaming-PCs
  • Serverboot, Caching & Logging im Rechenzentrum


* Table can be scrolled horizontally.

Base Model NumberKXG60ZNV1T02KXG60ZNV512GKXG60ZNV256G
Capacity1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2280-S2 Single-sided
lnterfacePCIe® 3.0, NVMe™ 1.3a
Maximum Interface Speed32 GT/s (PCIe® Gen3 x4)
Flash Memory TypeBiCS FLASH™ TLC
Performance (Up to)
Sequential Read3,180 MB/s3,100 MB/s3,050 MB/s
Sequential Write2,960 MB/s2,800 MB/s1,550 MB/s
Random Read355K IOPS325K IOPS270K IOPS
Random Write365K IOPS355K IOPS335K IOPS
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.7 W typ.4.1 W typ.4.0 W typ.
Power Consumption (L1.2 mode)3.0 mW typ.
MTTF1,500,000 hours
Thickness2.23 mm Max
Width22.0 mm ± 0.15 mm
Length80.0 mm ± 0.15 mm
Weight7.3 g Max7.0 g Max
Temperature (Operating)0 ℃ to 95 ℃ (Controller Temperature)
Temperature (Operating)0 ℃ to 85 ℃ (Other Components Temperature)
Temperature (Non-operating)-40 ℃ to 85 ℃
Humidity (Operating)0 % to 90 % R.H.
Vibration (Operating)196 m/s2 { 20 Grms } ( 20 Hz to 2,000 Hz )
Shock (Operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
  • Product image may represent a design model.
  • Availability of the SED model line-up may vary by region.
  • Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
  • MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
  • TBW: Terabytes Written. The number of terabytes that may be written to the SSD for the specified lifetime.
  • Read and write speed, tested on the state of "SLC cache=ON", may vary depending on the host device, read and write conditions, and file size.
  • PCIe is a registered trademark of PCI-SIG.
  • NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
  • Other company names, product names, and service names may be trademarks of third-party companies.



You can download past product information, white papers, and data sheets, etc.

Introducing technical glossary related to KIOXIA's products and technology including semiconductor memory and SSD.


Please contact us if you have any technical questions, requests for materials, are interested in samples or purchases of business products (Memory, SSD), etc.