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Série KIOXIA BG6 (M.2)
SSD NVMe™ do cliente
A série KIOXIA BG6 é uma linha de SSD NVMe™ de fator de forma compacto com capacidades até 2048 GB que utiliza uma PCIe® 4.0, interface compatível com a especificação NVMe™ 1.4c e memória flash KIOXIA de 6.ª geração BiCS FLASH™ TLC*. Com uma maior largura de banda, gestão de flash melhorada e tecnologia Host Memory Buffer (HMB), as SSD da série BG6 oferecem o melhor desempenho de leitura para SSD de fator de forma compacto até 6000 MB/s (leitura sequencial) e até 900.000 IOPS (leitura aleatória).
As SSDs da série KIOXIA BG6 estão disponíveis em capacidades de 256 GB, 512 GB, 1024 GB e 2048 GB em módulos M.2 Tipo 2230 e Tipo 2280, o que as torna adequadas para designs de sistemas finos e leves, como PCs ultrafinos. A série BG6 oferece uma opção de modelo de unidade de autoencriptação (SED), compatível com TCG Opal Versão 2.01.
- Memória flash KIOXIA de 5.ª geração BiCS FLASH™ TLC para SSD BG6 com capacidade de 256 GB e 512 GB
Documentos
Características principais
- Memória flash KIOXIA de 6.ª geração BiCS FLASH™ TLC (memória flash KIOXIA de 5.ª geração BiCS FLASH™ TLC para 256 GB e 512 GB)
- PCIe® 4.0, compatível com a especificação NVMe™ 1.4c
- Capacidade até 2048 GB
- Fatores de forma M.2 Tipo 2230 e Tipo 2280 de face única
- TCG OPAL 2.01 Opcional para SED
Aplicações-chave
- PCs ultra-móveis
- PC notebook 2 em 1
Especificações
* Table can be scrolled horizontally.
Base Model Number | KBG60ZNS2T04 | KBG60ZNS1T02 | KBG60ZNS512G | KBG60ZNS256G |
---|---|---|---|---|
SED Model Number | KBG6AZNS2T04 | KBG6AZNS1T02 | KBG6AZNS512G | KBG6AZNS256G |
Capacity | 2,048 GB | 1,024 GB | 512 GB | 256 GB |
Basic Specifications | ||||
Form Factor | M.2 2230-S3 Single-sided | M.2 2230-S2 Single-sided | ||
lnterface | PCIe® 4.0, NVMe™ 1.4c | |||
Maximum Interface Speed | 64 GT/s (PCIe® Gen4 x4) | |||
Flash Memory Type | BiCS FLASH™ TLC | |||
Performance (Up to) | ||||
Sequential Read | 6,000 MB/s | 4,800 MB/s | 4,400 MB/s | |
Sequential Write | 5,300 MB/s | 5,000 MB/s | 4,000 MB/s | 3,000 MB/s |
Random Read | 900K IOPS | 650K IOPS | 350K IOPS | |
Random Write | 900K IOPS | 850K IOPS | 700K IOPS | |
Power Requirements | ||||
Supply Voltage | 3.3 V ± 5 % | |||
Power Consumption (Active) | 4.4 W typ. | 4.3 W typ. | 4.7 W typ. | 4.3 W typ. |
Power Consumption (L1.2 mode) | 3.0 mW typ. | |||
Reliability | ||||
MTTF | 1,500,000 hours | |||
TBW | 1,200 | 600 | 300 | 150 |
Dimensions | ||||
Thickness | 2.38 mm Max | 2.23 mm Max | ||
Width | 22 mm ± 0.15 mm | |||
Length | 30 mm ± 0.15 mm | |||
Weight | 3.0 g Max | 2.9 g Max | 2.8 g Max | 2.7 g Max |
Environmental | ||||
Temperature (Operating) | 0 ℃ to 95 ℃ (Controller Temperature) | |||
Temperature (Operating) | 0 ℃ to 85 ℃ (Other Components Temperature) | |||
Temperature (Non-operating) | -40 ℃ to 85 ℃ | |||
Humidity (Operating) | 0 % to 90 % R.H. | |||
Vibration (Operating) | 196 m/s2 { 20 Grms } ( 20 to 2,000 Hz ) | |||
Shock (Operating) | 14.7 km/s2 { 1,500 G } ( 0.5 ms ) |
* Table can be scrolled horizontally.
Base Model Number | KBG60ZNV2T04 | KBG60ZNV1T02 | KBG60ZNV512G | KBG60ZNV256G |
---|---|---|---|---|
SED Model Number | KBG6AZNV2T04 | KBG6AZNV1T02 | KBG6AZNV512G | KBG6AZNV256G |
Capacity | 2,048 GB | 1,024 GB | 512 GB | 256 GB |
Basic Specifications | ||||
Form Factor | M.2 2280-S3 Single-sided | M.2 2280-S2 Single-sided | ||
lnterface | PCIe® 4.0, NVMe™ 1.4c | |||
Maximum Interface Speed | 64 GT/s (PCIe® Gen4 x4) | |||
Flash Memory Type | BiCS FLASH™ TLC | |||
Performance (Up to) | ||||
Sequential Read | 6,000 MB/s | 4,800 MB/s | 4,400 MB/s | |
Sequential Write | 5,300 MB/s | 5,000 MB/s | 4,000 MB/s | 3,000 MB/s |
Random Read | 900K IOPS | 650K IOPS | 350K IOPS | |
Random Write | 900K IOPS | 850K IOPS | 700K IOPS | |
Power Requirements | ||||
Supply Voltage | 3.3 V ± 5 % | |||
Power Consumption (Active) | 4.4 W typ. | 4.3 W typ. | 4.7 W typ. | 4.3 W typ. |
Power Consumption (L1.2 mode) | 3.0 mW typ. | |||
Reliability | ||||
MTTF | 1,500,000 hours | |||
TBW | 1,200 | 600 | 300 | 150 |
Dimensions | ||||
Thickness | 2.38 mm Max | 2.23 mm Max | ||
Width | 22 mm ± 0.15 mm | |||
Length | 80 mm ± 0.15 mm | |||
Weight | 6.0 g Max | 5.9 g Max | 5.8 g Max | 5.7 g Max |
Environmental | ||||
Temperature (Operating) | 0 ℃ to 95 ℃ (Controller Temperature) | |||
Temperature (Operating) | 0 ℃ to 85 ℃ (Other Components Temperature) | |||
Temperature (Non-operating) | -40 ℃ to 85 ℃ | |||
Humidity (Operating) | 0 % to 90 % R.H. | |||
Vibration (Operating) | 196 m/s2 { 20 Grms } ( 20 to 2,000 Hz ) | |||
Shock (Operating) | 14.7 km/s2 { 1,500 G } ( 0.5 ms ) |
- Product image may represent a design model.
- Availability of the SED model line-up may vary by region.
- Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
- IOPS: Input Output Per Second (or the number of I/O operations per second).
- TBW: Terabytes Written. The number of terabytes that may be written to the SSD for the specified lifetime.
- Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host device, read and write conditions, and file size.
- Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
- MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
- PCIe is a registered trademark of PCI-SIG.
- NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
- Other company names, product names, and service names may be trademarks of third-party companies.
- All information provided here is subject to change without prior notice.
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