Unidades SSD para clientes
Unidades SSD NVMe™ M.2

La serie XG6 utiliza la más reciente memoria Flash 3D TLC (3 bits por celda) de 96 capas de KIOXIA. Con la cuarta generación de BiCS FLASH™ y la función caché SLC, las unidades SSD de la serie XG6 alcanzan velocidades de lectura/escritura secuenciales de hasta 3180 MB/s y 2960 MB/s respectivamente, y ofrecen hasta 355 000 IOPS de lectura aleatoria y 365 000 IOPS de escritura aleatoria. Además del alto rendimiento, la serie XG6 conserva el concepto de bajo consumo de la familia XG, consumiendo 4,7 W o menos en modo activo y menos de 3 mW en modo de espera.

La nueva serie XG6 está optimizada para ordenadores portátiles de gran potencia, ordenadores para juegos orientados al rendimiento y, además, para arranque de servidores, almacenamiento en caché y generación de registros en centros de datos.
Además de estar disponible con un compacto diseño M.2 2280 de una cara, la serie XG6 viene en tres modelos de capacidad de 256 GB, 512 GB y 1024 GB, cada uno cuenta con la opción de un modelo de unidad con auto-cifrado (SED) compatible con TCG Opal versión 2.01.


Características principales

BiCS FLASH™ de 96 capas de KIOXIA

PCIe® Gen3 de 4 carriles, NVMe™

Capacidades de hasta 1024 GB

M.2 2280 de una cara

TCG Opal versión 2.01 opcional para SED

Aplicaciones clave

  • Ordenadores portátiles delgados de bajo rendimiento
  • Ordenadores de sobremesa de alto rendimiento
  • Ordenadores orientados a los juegos
  • Arranque de servidores, almacenamiento en caché y generación de registros del uso en centros de datos


* Table can be scrolled horizontally.

Model Number(Non-SED)KXG60ZNV1T02KXG60ZNV512GKXG60ZNV256G
Capacity1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2280-S2 Single-sided
Connector TypeM.2 M
lnterfacePCIe® Gen3 x4, NVMe™ 1.3a
lnterface Speed32 GT/s (Gen3 x4)
Flash Memory TypeBiCS FLASH™ TLC
Sequential Read3,180 MB/s3,100 MB/s3,050 MB/s
Sequential Write2,960 MB/s2,800 MB/s1,550 MB/s
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.7 W typ.4.1 W typ.4 W typ.
Power Consumption (L1.2 mode)3 mW typ.
MTTF1,500,000 hours
Height2.23 mm
Width22.0 mm
length80.0 mm typ.
Weight7.3 g typ.7.0 g typ.
Temperature (Operating)0 ~ 95 °C (Controller Temperature)
Temperature (Operating)0 ~ 85 °C (Other Components Temperature)
Temperature(Non-operating)-40 ~ 85 °C
Vibration (Operating/Non-operating)196 m/s2 { 20 G } ( Peak, 10 ~ 2,000 Hz )
Shock (Operating/Non-operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
More features・Sanitize command is supported.
・Namespace Management and Namespace Attachment commands are supported.
・Non-Operational Power State Configuration is supported.
・TCG Storage Interface Interactions Specification (SIIS) Version 1.07 is supported.
  • Product image may represent a design model.
  • Availability of the SED model line-up may vary by region.
  • Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
  • MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
  • Read and write speed, tested on the state of "SLC cache=ON", may vary depending on the host device, read and write conditions, and file size.
  • PCIe is a registered trademark of PCI-SIG.
  • NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
  • Other company names, product names, and service names may be trademarks of their respective companies.



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