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KIOXIA seria BG6 (M.2)
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Dysk SSD NVMe™ do zastosowań klienckich
KIOXIA seria BG6 to gama kompaktowych dysków SSD NVMe™ o pojemności do 2048 GB, które wykorzystują interfejs zgodny ze specyfikacjami PCIe® 4.0, NVMe™ 1.4c oraz pamięć flash TLC BiCS FLASH™ generacja 6*. Dzięki większej przepustowości i ulepszonej technologii zarządzania pamięcią flash oraz buforowi pamięci hosta (HMB) dyski SSD BG6 zapewniają bardzo wysoką wydajność odczytu w kompaktowych dyskach SSD, do 6000 MB/s (odczyt sekwencyjny) i do 900K IOPS (odczyt losowy).
Dyski SSD z serii KIOXIA BG6 są dostępne w pojemnościach 256 GB, 512 GB, 1024 GB i 2048 GB w modułach M.2 typu 2230 i 2280, dzięki czemu nadają się do cienkich i lekkich konstrukcji systemowych, takich jak ultracienkie komputery PC. Seria BG6 jest dostępna z opcjonalnym modelem SED (Self-Encrypting Drive) obsługującym TCG Opal w wersji 2.01.
- Dyski SSD BG6 z pamięcią flash KIOXIA TLC BiCS FLASH™ generacja 5 o pojemności 256 GB and 512 GB
Dokumenty
Najważniejsze cechy
- Pamięć flash KIOXIA TLC BiCS FLASH™ generacja 6 (pamięć flash KIOXIA TLC BiCS FLASH™ generacja 5 o pojemności 256 GB and 512 GB)
- Zgodność ze specyfikacjami PCIe® 4.0, NVMe™ 1.4c
- Pojemność do 2048 GB
- Jednostronna obudowa M.2 typu 2230 i typu 2280
- Z opcją SED TCG Opal 2.01
Kluczowe zastosowania
- Komputery ultramobilne
- Komputery przenośne typu 2 w 1
Specyfikacje
* Table can be scrolled horizontally.
| Base Model Number | KBG60ZNS2T04 | KBG60ZNS1T02 | KBG60ZNS512G | KBG60ZNS256G |
|---|---|---|---|---|
| SED Model Number | KBG6AZNS2T04 | KBG6AZNS1T02 | KBG6AZNS512G | KBG6AZNS256G |
| Capacity | 2,048 GB | 1,024 GB | 512 GB | 256 GB |
| Basic Specifications | ||||
| Form Factor | M.2 2230-S3 Single-sided | M.2 2230-S2 Single-sided | ||
| lnterface | PCIe® 4.0, NVMe™ 1.4c | |||
| Maximum Interface Speed | 64 GT/s (PCIe® Gen4 x4) | |||
| Flash Memory Type | BiCS FLASH™ TLC | |||
| Performance (Up to) | ||||
| Sequential Read | 6,000 MB/s | 4,800 MB/s | 4,400 MB/s | |
| Sequential Write | 5,300 MB/s | 5,000 MB/s | 4,000 MB/s | 3,000 MB/s |
| Random Read | 900K IOPS | 650K IOPS | 350K IOPS | |
| Random Write | 900K IOPS | 850K IOPS | 700K IOPS | |
| Power Requirements | ||||
| Supply Voltage | 3.3 V ± 5 % | |||
| Power Consumption (Active) | 4.4 W typ. | 4.3 W typ. | 4.7 W typ. | 4.3 W typ. |
| Power Consumption (L1.2 mode) | 3.0 mW typ. | |||
| Reliability | ||||
| MTTF | 1,500,000 hours | |||
| TBW | 1,200 | 600 | 300 | 150 |
| Dimensions | ||||
| Thickness | 2.38 mm Max | 2.23 mm Max | ||
| Width | 22 ｍｍ ± 0.15 mm | |||
| Length | 30 ｍｍ ± 0.15 mm | |||
| Weight | 3.0 g Max | 2.9 g Max | 2.8 g Max | 2.7 g Max |
| Environmental | ||||
| Temperature (Operating) | 0 ℃ to 95 ℃ (Controller Temperature) | |||
| Temperature (Operating) | 0 ℃ to 85 ℃ (Other Components Temperature) | |||
| Temperature (Non-operating) | -40 ℃ to 85 ℃ | |||
| Humidity (Operating) | 0 % to 90 % R.H. | |||
| Vibration (Operating) | 196 m/s2 { 20 Grms } ( 20 to 2,000 Hz ) | |||
| Shock (Operating) | 14.7 km/s2 { 1,500 G } ( 0.5 ms ) | |||
* Table can be scrolled horizontally.
| Base Model Number | KBG60ZNV2T04 | KBG60ZNV1T02 | KBG60ZNV512G | KBG60ZNV256G |
|---|---|---|---|---|
| SED Model Number | KBG6AZNV2T04 | KBG6AZNV1T02 | KBG6AZNV512G | KBG6AZNV256G |
| Capacity | 2,048 GB | 1,024 GB | 512 GB | 256 GB |
| Basic Specifications | ||||
| Form Factor | M.2 2280-S3 Single-sided | M.2 2280-S2 Single-sided | ||
| lnterface | PCIe® 4.0, NVMe™ 1.4c | |||
| Maximum Interface Speed | 64 GT/s (PCIe® Gen4 x4) | |||
| Flash Memory Type | BiCS FLASH™ TLC | |||
| Performance (Up to) | ||||
| Sequential Read | 6,000 MB/s | 4,800 MB/s | 4,400 MB/s | |
| Sequential Write | 5,300 MB/s | 5,000 MB/s | 4,000 MB/s | 3,000 MB/s |
| Random Read | 900K IOPS | 650K IOPS | 350K IOPS | |
| Random Write | 900K IOPS | 850K IOPS | 700K IOPS | |
| Power Requirements | ||||
| Supply Voltage | 3.3 V ± 5 % | |||
| Power Consumption (Active) | 4.4 W typ. | 4.3 W typ. | 4.7 W typ. | 4.3 W typ. |
| Power Consumption (L1.2 mode) | 3.0 mW typ. | |||
| Reliability | ||||
| MTTF | 1,500,000 hours | |||
| TBW | 1,200 | 600 | 300 | 150 |
| Dimensions | ||||
| Thickness | 2.38 mm Max | 2.23 mm Max | ||
| Width | 22 ｍｍ ± 0.15 mm | |||
| Length | 80 ｍｍ ± 0.15 mm | |||
| Weight | 6.0 g Max | 5.9 g Max | 5.8 g Max | 5.7 g Max |
| Environmental | ||||
| Temperature (Operating) | 0 ℃ to 95 ℃ (Controller Temperature) | |||
| Temperature (Operating) | 0 ℃ to 85 ℃ (Other Components Temperature) | |||
| Temperature (Non-operating) | -40 ℃ to 85 ℃ | |||
| Humidity (Operating) | 0 % to 90 % R.H. | |||
| Vibration (Operating) | 196 m/s2 { 20 Grms } ( 20 to 2,000 Hz ) | |||
| Shock (Operating) | 14.7 km/s2 { 1,500 G } ( 0.5 ms ) | |||
- Product image may represent a design model.
- Availability of the SED model line-up may vary by region.
- Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
- IOPS: Input Output Per Second (or the number of I/O operations per second).
- TBW: Terabytes Written. The number of terabytes that may be written to the SSD for the specified lifetime.
- Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host device, read and write conditions, and file size.
- Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
- MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
- PCIe is a registered trademark of PCI-SIG.
- NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
- Other company names, product names, and service names may be trademarks of third-party companies.
- All information provided here is subject to change without prior notice.
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